Characteristics of quaternary AlxInyGa(1?x?y)N/ InGaN heterostructure varying the composition of aluminium and indium

In this work, a theoretical study on different characteristics of AlInGaN/InGaN heterostructures for enhancing the device performance has been presented. The calculation of two dimensional electron gas sheet charge density of AlGaInN /InGaN heterostuctures has been carried out. The effect of spontaneous and piezoelectric polarization has been observed. Polarization has been simulated with the variation of mole fraction. It has been observed that with the increment of the mole fraction Indium element and the decrement of the mole fraction of Aluminium element, the total polarization increases. With the incorporation of Indium and associated changes of the Built-in strain in AlInGaN/InGaN heterostructures have detrimental effect on the transport properties two dimensional electron gas at the hetero interface.