Title :
Striking change of carrier lifetime in biased InGaN quantum wells: effect of tunneling and piezoelectric field
Author :
Jho, Y.D. ; Oh, E.S. ; Kim, D.S. ; Yhang, J.S.
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
Abstract :
We have performed spectrum-resolved and various time-resolved measurements in InGaN/GaN LED structures, varying the external voltage from +2 to -30 V. The lifetime shows a drastic decrease from 4 ns to 2 ps.
Keywords :
III-V semiconductors; carrier lifetime; gallium compounds; indium compounds; light emitting diodes; photoluminescence; piezoelectric semiconductors; quantum well devices; semiconductor quantum wells; time resolved spectra; tunnelling; wide band gap semiconductors; 2 to -30 V; 4 ns to 2 ps; InGaN-GaN; InGaN/GaN LED structures; PL peak energy; biased InGaN quantum wells; carrier lifetime; external voltage; piezoelectric field; spectrum-resolved measurements; time-resolved measurements; time-resolved photoluminescence; tunneling; Charge carrier lifetime; Gallium nitride; Laser excitation; Light emitting diodes; Physics; Pulse measurements; Pump lasers; Solids; Tunneling; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967988
