DocumentCode
375852
Title
Striking change of carrier lifetime in biased InGaN quantum wells: effect of tunneling and piezoelectric field
Author
Jho, Y.D. ; Oh, E.S. ; Kim, D.S. ; Yhang, J.S.
Author_Institution
Dept. of Phys., Seoul Nat. Univ., South Korea
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
We have performed spectrum-resolved and various time-resolved measurements in InGaN/GaN LED structures, varying the external voltage from +2 to -30 V. The lifetime shows a drastic decrease from 4 ns to 2 ps.
Keywords
III-V semiconductors; carrier lifetime; gallium compounds; indium compounds; light emitting diodes; photoluminescence; piezoelectric semiconductors; quantum well devices; semiconductor quantum wells; time resolved spectra; tunnelling; wide band gap semiconductors; 2 to -30 V; 4 ns to 2 ps; InGaN-GaN; InGaN/GaN LED structures; PL peak energy; biased InGaN quantum wells; carrier lifetime; external voltage; piezoelectric field; spectrum-resolved measurements; time-resolved measurements; time-resolved photoluminescence; tunneling; Charge carrier lifetime; Gallium nitride; Laser excitation; Light emitting diodes; Physics; Pulse measurements; Pump lasers; Solids; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967988
Filename
967988
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