Title :
Recent achievements of the ATLAS upgrade Planar Pixel Sensors R&D project
Author :
Evangelos - Leonidas Gkougkousis
Author_Institution :
Laboratoire de l´Acc?l?rateur Lin?aire - Universit? Paris-Sud 11, B?timent 200, 9140, Orsay, France
Abstract :
In the context of the HL-LHC upgrade of the ATLAS experiment, the introduction of a highly segmented radiation hard siliconized inner tracker is envisaged to cope with highly granularity. The Planar Pixel Sensors (PPS) collaboration, comprising of institutes from 16 countries, was established to investigate the transposability of already proven planar pixel technology to those harsh requirements. Introducing a comprehensive approach, state-of-the-art achievements in several scopes are presented: novice designs, including bias rail rerouting, active edge technologies and enlarged pixel implementations, 3D TCAD doping profile simulations in conjunction with secondary ion mass spectroscopy measurements, slim sensor productions eliminating support wafers as well as large area devices, Ni-Au under-bump metallisation effects as well as hybridization efforts, data acquisition systems developments and irradiation results from recent test beams. Presented results form a synthetic approach, providing insight in contemporary developments and open subjects with respect to silicon particle detectors.
Keywords :
"Semiconductor process modeling","Silicon","Detectors","Radiation effects","Semiconductor device modeling","Large Hadron Collider"
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2014 IEEE
DOI :
10.1109/NSSMIC.2014.7431067