Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications

Author

D. Comotti;L. Fabris;M. Grassi;L. Lodola;P. Malcovati;M. Manghisoni;L. Ratti;V. Re;G. Traversi;C. Vacchi;G. Batignani;S. Bettarini;G. Casarosa;F. Forti;F. Morsani;A. Paladino;E. Paoloni;G. Rizzo;M.A. Benckechkache;G.F. Dalla Betta;R. Mendicino;L. Pancheri

Author_Institution

Universit? di Pavia, Dipartimento di Ingegneria Industriale e dell´Informazione, Via Ferrata 1, I-27100, Italy

fYear

2014

Firstpage

1

Lastpage

6

Abstract

This work presents the design of a read-out channel suitable for application to silicon pixel detectors for the next generation Free Electron Laser (FEL) experiments. The readout architecture, which has been carried out in a 65 nm CMOS technology, consists of a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaping stage and a low-power analog-to-digital converter (ADC), hosted in a 100 μm-pitch pixel. The blocks will be operated in such a way to cope with the high frame rates (exceeding 1 MHz) foreseen for future X-ray FEL machines. The paper describes in detail the architecture and the performance of the CSA and provides an overview about the analog readout channel.

Keywords

"Capacitance","Photonics","Logic gates","Detectors","Threshold voltage","Dynamic range","MOS devices"

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2014 IEEE

Type

conf

DOI

10.1109/NSSMIC.2014.7431119

Filename

7431119