• DocumentCode
    3759889
  • Title

    A CMOS Charge Sensitive Amplifier with sub-electron equivalent noise charge

  • Author

    Giuseppe Bertuccio;Daniele Macera;Claudio Graziani;Mahdi Ahangarianabhari

  • Author_Institution
    Politecnico di Milano, Department of Electronics, Information and Bioengineering, via Anzani 42, 22100 Como, Italy
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 μs to 102 μs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of 1.18 e-. m.s. and at -30°C a minimum ENC of 0.89 e- r.m.s. has been measured, corresponding to a line width of 7.8 eV FWHM for a Silicon detector.
  • Keywords
    "Preamplifiers","Detectors","Temperature measurement","CMOS integrated circuits","Silicon","Noise measurement","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2014 IEEE
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2014.7431123
  • Filename
    7431123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3759889