Semiconductor neutron detector for harsh radiation applications

Epitaxial Silicon Carbide Schottky devices were characterized with the aim of using them for neutron detection at elevated temperatures. Current Voltage (I/V), capacitance Voltage (C/V) and alpha spectroscopy measurements were carried out at temperatures up to 500K. The resistivity dependance on temperature follows an exponential behaviour with an activation energy of 0.15meV. Ideality factor show a linear decrease with temperature up to 400 K and Schottky barrier height decreases with increasing temperature. Charge collection efficiency approaches 90% at 100V for most temperatures except for 500 K which shows a 5% reduction. Signal stability of the material and leakage current appear to improve with time, and in particular the leakage current stabilises faster at higher temperatures. These results indicate good charge transport behaviour and exceptional stability of the devices and so are expected to provide good detection performance of thermal neutrons (using convertor layers) in harsh radiation media.