• DocumentCode
    3760047
  • Title

    High energy resolution pixel detectors based on boron oxide vertical Bridgman grown CdZnTe crystals

  • Author

    Andrea Zappettini;Daniele Macera;Giacomo Benassi;Nicola Zambelli;Davide Calestani;M. Ahangarianabhari;Yongbiao Shi;Giuseppe Rotondo;Bruno Garavelli;Pietro Pozzi;Giuseppe Bertuccio

  • Author_Institution
    IMEM-CNR, Parma, Italy
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    CdZnTe crystals are used for the realization of X-ray detectors. In particular, pixel detectors can be exploited for many application fields such as medical diagnostics, security, and industrial inspection. In the last years, CdZnTe crystals have routinely been grown by the boron oxide encapsulated vertical Bridgman technique. In this work, it is shown that linear array detectors have been prepared based on this material. The detectors show low leakage current and have been coupled to a specifically designed research-grade low noise ASIC. The detectors show good spectroscopic characteristics and no polarization effects, meeting the requirements for the realization of high throughput, multi-energy scanners.
  • Keywords
    "Detectors","Crystals","Boron","Temperature measurement","Application specific integrated circuits","Electronic mail","Semiconductor device measurement"
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2014 IEEE
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2014.7431283
  • Filename
    7431283