GaInNAs/GaAs edge emitting lasers for the 1.3 to 1.5 μm wavelength range

GaInAsN/AlGaAs laser structures have been investigated in the telecommunication wavelength range from 1.3 μm to 1.5 μm. The separate confinement heterostructure laser layers have been grown by molecular beam epitaxy with an RF nitrogen source. Broad area lasers at 1.3 μm have threshold current densities of 780 A/cm². Ridge waveguide lasers with threshold currents of 21 mA and external efficiencies of 0.5 W/A have been realized. Using metal gratings along both sides of the ridge loss coupled distributed feedback lasers have been obtained with side mode suppression ratios above 40 dB. When the N-fraction is increased to about 5% the emission wavelength of the lasers is shifted to 1.5 μm. GaInNAs laser data at 1.4 μm and 1.5 μm are reported