Title :
Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)
Author :
Kondow, M. ; Kitatani, T. ; Aoki, M. ; Nakatsuka, S. ; Kudo, M.
Author_Institution :
RWCP Optoelectronics Hitachi Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al0.3Ga0.7As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; rapid thermal annealing; semiconductor lasers; stimulated emission; 10 Gbit/s; 600 C; 70 C; 750 C; Al0.3Ga0.7As; GaInNAs; PL intensity; RTA; cladding layer; crystallinity; edge-emitting laser; growth temperature; low in-situ annealing temperature; photoluminescence intensity; solid-source MBE; Crystallization; Electronic mail; Laboratories; Lasers and Electro-Optics Society; Next generation networking; Rapid thermal annealing; Surface emitting lasers; Surface waves; Temperature dependence; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968969
