Title :
Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip
Author :
Ng, S.L. ; Djie, H.S. ; Lim, H.S. ; Ooi, B.S. ; Lam, Y.L. ; Chan, Y.C. ; Dowd, P. ; Aimez, Vincent ; Beauvais, J. ; Beerens, J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
We report the fabrication of 10-channel electro-absorption (EA) modulator arrays using a lattice-matched InGaAs/InGaAsP MQW structure. The fabrication method is based on the combination of using gray mask lithography and a low-energy arsenic (As) ion-implantation induced disordering (IIID) process. To understand how the QWI process may affect polarisation performance, a theoretical model based on different rates of group III and group V interdiffusion has also been developed
Keywords :
III-V semiconductors; chemical interdiffusion; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; ion implantation; masks; optical arrays; optical communication equipment; optical fabrication; photoresists; semiconductor quantum wells; 10-channel electro-absorption modulator arrays; InGaAs-InGaAsP; InGaAs/InGaAsP chip; QWI process; fabrication method; gray mask lithography; interdiffusion; lattice-matched InGaAs/InGaAsP MQW structure; low-energy arsenic ion-implantation induced disordering; multiple wavelength electro-absorption intensity modulator arrays; polarisation performance; polarisation-dependent performance; Bandwidth; Chirp modulation; Energy measurement; Intensity modulation; Lithography; Photoconductivity; Polarization; Quantum well devices; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969162
