DocumentCode :
3760679
Title :
Design of broadband Low Noise Amplifier (LNA) 4G LTE TDD 2.3 GHz for modem application
Author :
Ahmad Sidik;Maulana Yusuf Fathany;Basuki Rahmatul Alam
Author_Institution :
Electronics Research Group, School of Electrical Engineering and Informatics, Institute of Technology Bandung, Labtek VIII Building 3rd Fl, Jl Ganesha no 10, 40132, Indonesia
fYear :
2015
Firstpage :
488
Lastpage :
492
Abstract :
This paper discusses the design and simulation of Low Noise Amplifier (LNA) for 4G LTE communication system at 2.3 GHz. The design and simulation are performed on Advance Design System (ADS) design suite. Low noise transistor ATF-54143 with minimum noise figure of 0.46 dB is used with class A bias circuit. Drain current and drain to source voltage are measured to be 28.07 mA and 2.77 volt with supply voltage of 5 volt. Noise figure as low as 0.9 dB is used to compensate the 13.8 dB gain of the amplifier. Simulation with QPSK modulation and channel modeling is performed and yield the same transmitted and received data.
Keywords :
"Gain","Noise figure","Phase shift keying","Impedance","Low-noise amplifiers","Impedance matching"
Publisher :
ieee
Conference_Titel :
Intelligent Signal Processing and Communication Systems (ISPACS), 2015 International Symposium on
Type :
conf
DOI :
10.1109/ISPACS.2015.7432821
Filename :
7432821
Link To Document :
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