Title :
On the design broadband 2.3GHz RF amplifier for LTE front-end
Author :
Basuki Rachmatul Alam
Author_Institution :
Electronics Research Group, School of Electrical Engineering and Informatics, Institute of Technology Bandung, Indonesia
Abstract :
Design and simulation of broadband RF Amplifier has been carried out for 2.3GHz LTE transmission front end. Bandwidth of 500MHz of the broadband RF amplifier has been done by implementing multi-section step-line impedance matching approach at the input and output networks. The broadband design of the LD-MOSFET has been carried out by using ADS Harmonic Balanced simulator. The LD-MOSFET HI-SIM HV model in the ADS simulator have been utilized to fit to RF transistor S-parameter. The LD-MOSFET RF Amplifier shows broadband performance of simulated S21 from 2.3 - 2.5GHz to 2.5GHz with center frequency at 2300MHz. S11and S22 simulation from 500 to 2.5GHz shows broadband behavior with both circular curves centering the origin.
Keywords :
"Broadband amplifiers","Radio frequency","Impedance matching","Impedance","Broadband antennas","Linearity"
Conference_Titel :
Intelligent Signal Processing and Communication Systems (ISPACS), 2015 International Symposium on
DOI :
10.1109/ISPACS.2015.7432842
