Electrically injected photonic bandgap microcavity light sources

Author

Bhattacharya, P. ; Zhou, W.D. ; Sabarinathan, J. ; Yu, P.-C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., USA

Volume

1

fYear

2001

fDate

2001

Firstpage

76

Abstract

The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW λ-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region

Keywords

III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium arsenide; indium compounds; microcavity lasers; photonic band gap; vapour phase epitaxial growth; GaAs; GaAs substrate; InGaAs; InGaAs MQW laser; MOVPE; electrically injected photonic bandgap microcavity light source; low Q vertical cavity; metal-organic vapor phase epitaxy; oxide confinement layer; Laser modes; Light sources; Microcavities; Optical pumping; Photonic band gap; Photonic crystals; Pump lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969180

Filename

969180