Title :
Effective alpha factor in bulk semiconductor optical amplifiers of different lengths
Author :
Occhi, L. ; Scollo, R. ; Schares, L. ; Guekos, G.
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Switzerland
Abstract :
We presented and discussed experimental and numerical results on the effective alpha factor in bulk SOAs. We showed that the magnitude of alpha factor increases by increasing the dc bias current. Moreover we demonstrated that the effective alpha factor significantly increases with the length of the active region, because of the nonlinear gain compression. This characteristic can be very important for applications based on cross phase modulation in SOAs
Keywords :
carrier density; electro-optical modulation; nonlinear optics; optical communication equipment; semiconductor optical amplifiers; XPM; active region; bulk SOAs; bulk semiconductor optical amplifiers; cross phase modulation; dc bias current; effective alpha factor; nonlinear gain compression; numerical results; Charge carrier density; Current measurement; Nonlinear optics; Optical beams; Optical modulation; Optical signal processing; Optical wavelength conversion; Phase modulation; Semiconductor optical amplifiers; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969195
