Title :
InP-based monolithic integrated circuits based on quantum well intermixing technology
Author_Institution :
Intense Photonics, Glasgow, UK
Abstract :
As an example of a monolithic photonic integrated circuit, we have fabricated 2 x 2 crosspoint switches in both the InGaAsP and AlGaInAs material systems. The switches have two input and two output waveguides each spaced 250 μm apart. They contain amplifiers, passive waveguides, and modulators. The passive sections contain multi-mode interference (MMI) couplers and a waveguide crossing region
Keywords :
III-V semiconductors; chemical interdiffusion; electro-optical modulation; indium compounds; integrated optoelectronics; light emitting diodes; optical couplers; optical interconnections; optical planar waveguides; quantum well lasers; semiconductor optical amplifiers; semiconductor technology; 250 micron; AlGaInAs; InGaAsP; InP; input waveguides; modulators; multi-mode interference couplers; output waveguides; passive sections; passive waveguides; semiconductor optical amplifiers; waveguide crossing region; Arrayed waveguide gratings; Integrated circuit technology; Monolithic integrated circuits; Optical waveguides; Photonic band gap; Photonic integrated circuits; Semiconductor impurities; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969225
