Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers

Author

Kaspi, R. ; Ongstad, A. ; Moeller, Charles ; Tilton, Michael L. ; Chavez, Jorge ; Gianardi, D.

Author_Institution

Kirtland AFB, Air Force Res. Lab., Albuquerque, NM

Volume

1

fYear

2001

fDate

2001

Firstpage

196

Abstract

We report on optically-pumped mid-infrared (3.4 - 4.5 μm) lasers based on InAs/InGaSb/InAs type-II quantum wells that are periodically inserted into the InGaAsSb waveguide designed to absorb the 1.85 μm pump radiation. The integrated absorber layers allow the decoupling of pump absorption from the type-II quantum wells, and efficiently supply carries into these wells by ambipolar diffusion. These type-II integrated absorber lasers exhibit high quantum efficiency and high characteristic temperature associated with lasing threshold

Keywords

III-V semiconductors; diffusion; gallium compounds; indium compounds; infrared sources; laser transitions; light absorption; optical pumping; quantum well lasers; waveguide lasers; 1.85 micron; 3.4 to 4.5 micron; InAs-InGaSb-InAs; InAs/InGaSb/InAs type-II quantum wells; InGaAsSb; InGaAsSb waveguide; ambipolar diffusion; high characteristic temperature; high quantum efficiency; integrated absorber layers; optically pumped; pump absorption; pump radiation; quantum well lasers; type-II antimonide mid-IR lasers; Absorption; Integrated optics; Laser excitation; Optical design; Optical pumping; Optical waveguides; Pump lasers; Quantum well lasers; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969240

Filename

969240