AlGaInSb/GaInSb multiple quantum well mid-infrared lasers

Author

Pease, E.A. ; Dawson, L.R. ; Gray, A.L. ; Lester, L.F. ; Gianardi, D.M.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

202

Abstract

We show the optically pumped results for two samples with room temperature target wavelengths of 2.5 and 2.7 μm. The wafers are composed of 4 compressively strained QWs sandwiched in a 1 μm AlGaInSb waveguide region. The samples were cleaved into 1-mm cavity lengths and pumped with 222-μm stripe widths. The pump is a 980 nm array using 50 μs pulses and 5% duty cycle. The 2.5 μm wavelength sample is composed of 100 Å Ga_0.60In_0.40Sb wells with Al_0.20Ga_0.48In_0.32Sb barriers

Keywords

III-V semiconductors; gallium compounds; indium compounds; optical pumping; quantum well lasers; waveguide lasers; 1 micron; 2.5 micron; 2.7 micron; 222 micron; 980 nm; Al_0.20Ga_0.48In_0.32Sb; Al_0.20Ga_0.48In_0.32Sb barriers; AlGaInSb waveguide region; AlGaInSb-GaInSb; AlGaInSb/GaInSb multiple quantum well mid-infrared lasers; Ga_0.60In_0.40Sb; Ga_0.60In_0.40Sb wells; compressively strained QWs; optically pumped; room temperature target wavelengths; Chemical lasers; Gas lasers; Heterojunctions; Laser radar; Optical buffering; Optical filters; Physics; Pump lasers; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969243

Filename

969243