Title :
AlGaInSb/GaInSb multiple quantum well mid-infrared lasers
Author :
Pease, E.A. ; Dawson, L.R. ; Gray, A.L. ; Lester, L.F. ; Gianardi, D.M.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We show the optically pumped results for two samples with room temperature target wavelengths of 2.5 and 2.7 μm. The wafers are composed of 4 compressively strained QWs sandwiched in a 1 μm AlGaInSb waveguide region. The samples were cleaved into 1-mm cavity lengths and pumped with 222-μm stripe widths. The pump is a 980 nm array using 50 μs pulses and 5% duty cycle. The 2.5 μm wavelength sample is composed of 100 Å Ga0.60In0.40Sb wells with Al0.20Ga0.48In0.32Sb barriers
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; quantum well lasers; waveguide lasers; 1 micron; 2.5 micron; 2.7 micron; 222 micron; 980 nm; Al0.20Ga0.48In0.32Sb; Al0.20Ga0.48In0.32Sb barriers; AlGaInSb waveguide region; AlGaInSb-GaInSb; AlGaInSb/GaInSb multiple quantum well mid-infrared lasers; Ga0.60In0.40Sb; Ga0.60In0.40Sb wells; compressively strained QWs; optically pumped; room temperature target wavelengths; Chemical lasers; Gas lasers; Heterojunctions; Laser radar; Optical buffering; Optical filters; Physics; Pump lasers; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969243
