Title :
Clock extraction using an InP/InGaAs HPT direct optical injection-locked oscillator IC with a very wide locking range
Author :
Kamitsuna, Hideki ; Kurishima, Kenji ; Shibata, Tsugumichi
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper presents a new optoelectronic clock recovery circuit that consists of an InP/InGaAs heterojunction phototransistor (HPT) DOILO and a PLC Mach-Zehnder interferometer (MZI). For high-performance, the HPT must have excellent photodetection characteristics as well as sufficient gain to generate an oscillation. An HPT whose layer and process are fully compatible with a high-performance HBT, with an optical gain cutoff frequency of 60 GHz and fmax of 82 GHz enables us to achieve a high-performance 14-GHz-band HPT DOILO. In addition, the PLC-MZI, which can generate a frequency component of the clock signal from an NRZ data signal by way of an exclusive OR (EX-OR) function in the optical domain, is successfully combined with the HPT DOILO
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; bipolar analogue integrated circuits; gallium arsenide; indium compounds; injection locked oscillators; integrated optoelectronics; optical receivers; phototransistors; synchronisation; 13.1 Gbit/s; 60 GHz; 82 GHz; InP-InGaAs; InP/InGaAs HPT direct optical injection-locked oscillator IC; NRZ data signal; PLC Mach-Zehnder interferometer; clock extraction; exclusive OR function; heterojunction phototransistor; high-performance HBT compatibility; maximum oscillation frequency; optical gain cutoff frequency; optical transmission receivers; optoelectronic clock recovery circuit; photodetection characteristics; very wide locking range; Character generation; Circuits; Clocks; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical interferometry; Phototransistors; Programmable control;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969262
