Title :
High temperature continuous wave operation of InAs quantum dot lasers near 1.3 μm
Author :
Qiu, Y. ; Gogna, P. ; Forouhar, S. ; Stintz, A. ; Lester, L.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We have demonstrated high performance temperature insensitive narrow ridge waveguide QD lasers near 1.3 μm using four stacks of InAs QD layer embedded within strained InGaAs quantum wells as an active region. For a 1.5 mm long cavity QD laser, ground state CW lasing has been achieved with single facet output power of 15 mW and a differential slope efficiency of 35% at temperature as high as 100C, while at room temperature having a differential quantum efficiency about 55% and single facet output power of 50 mW. The characteristic temperature for ground state CW lasing is 78 K at temperatures ranging from 200C to 1000C
Keywords :
Debye temperature; III-V semiconductors; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 micron; 1.5 mm; 100 C; 15 mW; 200 to 1000 C; 35 percent; 50 mW; 55 percent; 78 K; InAs; InAs QD layer; InGaAs; active region; characteristic temperature; differential quantum efficiency; differential slope efficiency; ground state CW lasing; high performance temperature insensitive narrow ridge waveguide QD lasers; long cavity QD laser; room temperature; single facet output power; strained InGaAs quantum wells; Indium gallium arsenide; Land surface temperature; Power generation; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Stationary state; Temperature distribution; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969277
