High temperature continuous wave operation of InAs quantum dot lasers near 1.3 μm

Author

Qiu, Y. ; Gogna, P. ; Forouhar, S. ; Stintz, A. ; Lester, L.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

267

Abstract

We have demonstrated high performance temperature insensitive narrow ridge waveguide QD lasers near 1.3 μm using four stacks of InAs QD layer embedded within strained InGaAs quantum wells as an active region. For a 1.5 mm long cavity QD laser, ground state CW lasing has been achieved with single facet output power of 15 mW and a differential slope efficiency of 35% at temperature as high as 100C, while at room temperature having a differential quantum efficiency about 55% and single facet output power of 50 mW. The characteristic temperature for ground state CW lasing is 78 K at temperatures ranging from 200C to 1000C

Keywords

Debye temperature; III-V semiconductors; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 micron; 1.5 mm; 100 C; 15 mW; 200 to 1000 C; 35 percent; 50 mW; 55 percent; 78 K; InAs; InAs QD layer; InGaAs; active region; characteristic temperature; differential quantum efficiency; differential slope efficiency; ground state CW lasing; high performance temperature insensitive narrow ridge waveguide QD lasers; long cavity QD laser; room temperature; single facet output power; strained InGaAs quantum wells; Indium gallium arsenide; Land surface temperature; Power generation; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Stationary state; Temperature distribution; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969277

Filename

969277