Physics of 1.3 μm (GaIn)(NAs)/GaAs semiconductor lasers

Author

Hofmann, M. ; Gerhardt, N. ; Wagner, A. ; Stolz, W. ; Koch, S.W. ; Rühle, W.W. ; Hader, J. ; Moloney, J.V. ; Schneider, H.C. ; Chow, W.W.

Author_Institution

Philipps-Univ., Marburg, Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

326

Abstract

Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 μm (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; (GaIn)(NAs)/GaAs VCSEL; 1.3 micron; 10.5 ps; 15.5 ps; 30 to 388 K; GaInNAs-GaAs; MOCVD growth; Ti:sapphire laser; emission dynamics; optical pumping; peak delay time; picosecond dynamics; pulse width; quantum well structure; temperature dependence; Gallium arsenide; Laser excitation; Laser theory; MOCVD; Optical pumping; Physics; Pump lasers; Semiconductor lasers; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969307

Filename

969307