Taper line distributed photodetector

Author

Shi, Jin-Wei ; Sun, Chi-Kuang ; Bowers, John E.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

2001

fDate

2001

Firstpage

382

Abstract

Taper line structure is one of the ways that can solve the reverse wave problem in distributed amplifier circuit The challenge in the design of this structure is high impedance line in the first taper section. In this paper, we propose a novel type of distributed photodetector: taper line distributed photodetector. We adopt the low temperature grown GaAs based self-align metal-semiconductor-metal traveling wave photodetector structure as the active photoabsorption region in each taper section for its high speed and high efficiency characteristics

Keywords

III-V semiconductors; frequency response; gallium arsenide; metal-semiconductor-metal structures; microwave photonics; optical receivers; photodetectors; GaAs; active photoabsorption region; bandwidth calculation; frequency response; high efficiency characteristics; high speed characteristics; low temperature grown; microwave loss; self-align MSM TW structure; taper line distributed photodetector; velocity match distributed photodetector; Bandwidth; Coplanar waveguides; Frequency response; Glass; High speed optical techniques; Impedance; Integrated circuit interconnections; Optical interconnections; Optical losses; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969335

Filename

969335