DocumentCode
3762349
Title
Engineering the performance of metal/insulator/metal devices with ALD nanolaminate insulators
Author
John F. Conley
Author_Institution
School of EECS, Oregon State University, Corvallis, United States
fYear
2015
Firstpage
1
Lastpage
1
Abstract
Thin film metal-insulator-metal (MIM) devices find application not only as back-end-of-line (BEOL) capacitors (MIMCAPs), but also as tunnel diodes for optical rectenna based IR energy harvesting, IR detectors, large area macroelectronics, hot electron transistors, and as selector devices to avoid sneak leakage in resistive memory (RRAM) crossbar arrays. This invited talk will highlight how nanolaminate combinations of insulators deposited via atomic layer deposition (ALD) can be used to enhance the performance of MIIM diodes and MIIM capacitors as well as discuss reliability issues.
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN
978-1-4673-7395-1
Electronic_ISBN
2374-8036
Type
conf
DOI
10.1109/IIRW.2015.7437054
Filename
7437054
Link To Document