DocumentCode :
3762349
Title :
Engineering the performance of metal/insulator/metal devices with ALD nanolaminate insulators
Author :
John F. Conley
Author_Institution :
School of EECS, Oregon State University, Corvallis, United States
fYear :
2015
Firstpage :
1
Lastpage :
1
Abstract :
Thin film metal-insulator-metal (MIM) devices find application not only as back-end-of-line (BEOL) capacitors (MIMCAPs), but also as tunnel diodes for optical rectenna based IR energy harvesting, IR detectors, large area macroelectronics, hot electron transistors, and as selector devices to avoid sneak leakage in resistive memory (RRAM) crossbar arrays. This invited talk will highlight how nanolaminate combinations of insulators deposited via atomic layer deposition (ALD) can be used to enhance the performance of MIIM diodes and MIIM capacitors as well as discuss reliability issues.
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
Type :
conf
DOI :
10.1109/IIRW.2015.7437054
Filename :
7437054
Link To Document :
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