DocumentCode :
3762357
Title :
Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs
Author :
C. D. Young;R. Campbell;S. Daasa;S. Benton;R. Rodriguez Davila;I. Mejia;M. Quevedo-Lopez
Author_Institution :
University of Texas at Dallas, Department of Materials Science and Engineering, 800 W. Campbell Rd., RL10, Richardson, 75080, United States
fYear :
2015
Firstpage :
34
Lastpage :
36
Abstract :
We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.
Keywords :
"Hysteresis","Thin film transistors","Dielectrics","Hafnium compounds","Annealing","Zinc oxide","Dielectric measurement"
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
Type :
conf
DOI :
10.1109/IIRW.2015.7437062
Filename :
7437062
Link To Document :
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