• DocumentCode
    3762364
  • Title

    From WLR to product reliability and qualifications in the 3D transistor era

  • Author

    S. Pae;H.C. Sagong;C. Liu;J. Kim;M. Jin;J. Shim;Y. Kim;J. Jo;J.K. Park;M. Choi;S. Kim;W. Kim;S. Park;S. Shin;J. Park

  • Author_Institution
    Quality & Reliability Team, LSI Business, SAMSUNG ELECTRONICS, Rep. of Korea
  • fYear
    2015
  • Firstpage
    68
  • Lastpage
    68
  • Abstract
    Reliability mechanisms associated with HK+MG transistors including latest FinFETs on 14nm technology node will be discussed along with circuit and product implications on reliabilty stresses and qualifications. Reliability efforts made at the transistor module level to circuit, IP blocks, and finally to a product level reliability will be discussed and limiting mechanisms and examples will be highlighted. As part of the product qual strategy, high-speed HTOL and Set level tests were leveraged to signficantly lower product dpms and seamless introduction of high volume manufacturing.
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop (IIRW), 2015 IEEE International
  • Print_ISBN
    978-1-4673-7395-1
  • Electronic_ISBN
    2374-8036
  • Type

    conf

  • DOI
    10.1109/IIRW.2015.7437069
  • Filename
    7437069