Title :
Massively parallel TDDB testing: SiC power devices
Author :
Z. Chbili;J. Chbili;J. P. Campbell;J. T. Ryan;M. Lahbabi;D. E. Ioannou;K. P. Cheung
Author_Institution :
Semiconductor and Dimensional Metrology Division, NIST, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Abstract :
This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration compared to SiO2 on Si.
Keywords :
"Silicon carbide","Acceleration","Silicon","Stress","Testing","Reliability","Probes"
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
DOI :
10.1109/IIRW.2015.7437075
