• DocumentCode
    3762381
  • Title

    Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

  • Author

    G. Torrente;X. Federspiel;D. Rideau;F. Monsieur;C. Tavernier;J. Coignus;D. Roy;G. Ghibaudo

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France
  • fYear
    2015
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.
  • Keywords
    "Stress","Degradation","Hot carriers","Kinetic theory","Aging","Reliability","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop (IIRW), 2015 IEEE International
  • Print_ISBN
    978-1-4673-7395-1
  • Electronic_ISBN
    2374-8036
  • Type

    conf

  • DOI
    10.1109/IIRW.2015.7437086
  • Filename
    7437086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3762381