Title :
Neuron MOSFET as a way to design a threshold gates with the threshold and input weights alterable in real time
Author :
R. Lashevsky;K. Takaara;M. Souma
Author_Institution :
Univ. of Aizu, Japan
Abstract :
MOS-transistors with floating gate (Neuron MOSFET or /spl nu/MOS) as a way to build threshold gates with parameters changeable in real time is discussed. Two types of /spl nu/MOS circuits, static and clocked, are under consideration. The latter is preferable for threshold gates with a large number of inputs. The possibility of minimizing the chip area and delay time is shown for the case of using /spl nu/MOS threshold gates to design VLSI neural networks with on-chip learning.
Keywords :
"Neurons","MOSFET circuits","Inverters","Clocks","Capacitance","Capacitors","Threshold voltage","State feedback","FETs","Delay effects"
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-5146-0
DOI :
10.1109/APCCAS.1998.743739