Effective device electrical parameter extraction of nanoscale FinFETs: Challenges and results

The accurate evaluation of electrical parameters like effective channel length and series resistance for 10 to 22nm FinFETs is very complex, although extremely important for the correct device modelling. Our paper reviews and applies to measured FinFETs various DC methods for the extraction of effective channel length and source/drain resistance. Experimental devices with fin thickness from 10nm to 20nm were measured and the extraction methodologies explored show consistent values of RSD in the range of 500Ω to 300Ω respectively, for five parallel fins. All methods herein discussed and applied, however, have limitations in their application to FinFET devices. Our work discusses the challenges and possible options for the Leff extraction on advanced FinFET technologies.