Insights for utilizing the memristor as a multi-bit based memory

The memristor, known as the fourth basic two-terminal circuit element, has attracted many research interests since HP labs were able to develop the device based on what L. Chua predicted theoretically. The memristor is a potential contender for the next-generation memory due to its distinctive characters, such as non-volatility, non-linearity, low-power consumption, good scalability and its ability to store multi-bit values. These electrical characteristics of memristors are mainly determined by the material characteristic and the fabrication process. However, the manufacturing of memristors is facing various challenges due to the difficulty of controlling its process variation, as it is fabricated at nano-scale geometry´s size. These process variations lead to deviation in results from the theoretical results which lead to reduction in the reading yield. In this paper, we present the multi-bit memristor and we investigate the effect of the memristor size and the process variations effect on the multi-bit memristor and how we can maximize the reading yield.