DocumentCode :
3762868
Title :
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications
Author :
Jay Hind K. Verma;Mridula Gupta;Subhasis Haldar;R. S. Gupta
Author_Institution :
Department of Electronic Science, University of Delhi South campus, New Delhi, India, 110021
fYear :
2015
Firstpage :
186
Lastpage :
189
Abstract :
This paper presents linearity and analog performance of new cylindrical MOSFET for wireless application. It is based on the incorporation of an inner core gate in the Cylindrical Surrounding Gate (CSG) MOSFET. Inner gate incorporation improves the electrical performance of the device in the nanoscale region. Linearity parameter like higher order transconductance, second and third order voltage intercept point and third order intercept input power are calculated using ATLAS device simulator. ITRS roadmap has been taken in consideration as 22 nm gate length for the analysis.
Keywords :
"Logic gates","Performance evaluation","Silicon","Radio frequency","Electrostatics"
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2015 27th International Conference on
Electronic_ISBN :
2159-1679
Type :
conf
DOI :
10.1109/ICM.2015.7438019
Filename :
7438019
Link To Document :
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