Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications

This paper presents linearity and analog performance of new cylindrical MOSFET for wireless application. It is based on the incorporation of an inner core gate in the Cylindrical Surrounding Gate (CSG) MOSFET. Inner gate incorporation improves the electrical performance of the device in the nanoscale region. Linearity parameter like higher order transconductance, second and third order voltage intercept point and third order intercept input power are calculated using ATLAS device simulator. ITRS roadmap has been taken in consideration as 22 nm gate length for the analysis.