Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode

In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×10⁴ when exposing to a 1% H₂/air gas at 100°C, and also detect even as low as 50 ppm H₂/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H₂/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.