Dielectric engineering of nanostructured layers preventing electrostatic charging in thin dielectrics

New dielectric-engineering concept is developed intending a net improvement of the performance of dielectric layers under electrical stress. Instead of synthesis of new dielectric materials a new class of dielectric layers that gain their performance from design rather than from composition is established. Two kinds of nanostructured dielectric layers are presented here: (i) silicon oxynitride layers (SiOxNy:H) with gradual variation of their properties (discrete or continuous), and (ii) SiO2 layers with tailored interfaces; a single layer of silver nanoparticles (AgNPs) is embedded in the vicinity of the dielectric free surface. The nanostructured layers exhibit much shorter charge retention times and appear promising candidates for general applications where surface charging of dielectrics must be avoided, in particular for implementation in RF MEMS capacitive switches with electrostatic actuation.