• DocumentCode
    3763565
  • Title

    Evaluation of SiO2 films for the application to a flexible substrate

  • Author

    Kimihiko Imura;Tatsuya Okada;Hikaru Tamashiro;Takuya Ashitomi;Takashi Noguchi

  • Author_Institution
    Faculty of Engineering, University of the Ryukyus, Nishihara, Japan
  • fYear
    2015
  • Firstpage
    113
  • Lastpage
    114
  • Abstract
    SiO2 films deposited by RF sputtering at room temperature have been investigated for the gate insulator of TFTs. As a result of mixing oxygen into argon gas during deposition, leakage current of the film decreased, and the breakdown voltage increased over 8 MV/cm. From high-frequency C-V characteristics, hysteresis was reduced from 2.5 to 0.04 V by performing 4% H2 annealing after the deposition. These results suggest that RF sputter-deposited SiO2 film is promising for a gate insulator in TFTs of low heat-resistant substrate.
  • Keywords
    "Films","Thin film transistors","Substrates","Logic gates","Insulators","Annealing","Radio frequency"
  • Publisher
    ieee
  • Conference_Titel
    Intelligent Informatics and Biomedical Sciences (ICIIBMS), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICIIBMS.2015.7439497
  • Filename
    7439497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3763565