• DocumentCode
    3763704
  • Title

    Failure mechanisms in high power diode lasers: wide -vs- narrow band gap materials

  • Author

    Martin Hempel;Jens W. Tomm

  • Author_Institution
    Max-Born-Institute, Berlin, Germany
  • fYear
    2015
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    High power degradation mechanisms in gallium arsenide and gallium nitride based diode laser devices are compared. It will be demonstrated that in both material systems the same physical mechanism takes effect and causes a catastrophic optical damage. The differences in appearance of the degradation in the two systems are explained by intrinsic material properties.
  • Keywords
    "Diode lasers","Gallium nitride","Degradation","Gallium arsenide","Power generation","Temperature measurement","Cameras"
  • Publisher
    ieee
  • Conference_Titel
    High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE
  • ISSN
    2379-0385
  • Print_ISBN
    978-1-4673-9177-1
  • Electronic_ISBN
    2379-0393
  • Type

    conf

  • DOI
    10.1109/HPD.2015.7439686
  • Filename
    7439686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3763704