Title :
Failure mechanisms in high power diode lasers: wide -vs- narrow band gap materials
Author :
Martin Hempel;Jens W. Tomm
Author_Institution :
Max-Born-Institute, Berlin, Germany
Abstract :
High power degradation mechanisms in gallium arsenide and gallium nitride based diode laser devices are compared. It will be demonstrated that in both material systems the same physical mechanism takes effect and causes a catastrophic optical damage. The differences in appearance of the degradation in the two systems are explained by intrinsic material properties.
Keywords :
"Diode lasers","Gallium nitride","Degradation","Gallium arsenide","Power generation","Temperature measurement","Cameras"
Conference_Titel :
High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE
Print_ISBN :
978-1-4673-9177-1
Electronic_ISBN :
2379-0393
DOI :
10.1109/HPD.2015.7439686
