• DocumentCode
    3763798
  • Title

    Bulk and FDSOI Sub-micron CMOS transistors resilience to single-event transients

  • Author

    Walter Calienes Bartra;Andrei Vladimirescu;Ricardo Reis

  • Author_Institution
    Universidade Federal do Rio Grande do Sul, PGMicro - Instituto de Inform?tica, Porto Alegre, RS - Brazil
  • fYear
    2015
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on the Drain region. The impacts were performed in different transistor locations at different impact angles whereas previous works considered the impact just at a 0 degree angle. This comparison is performed with the device in the off-state using 2D TCAD simulations. The results show a 7.7 times improved resilience of the FDSOI transistor compared to that of Bulk MOSFET.
  • Keywords
    "Transistors","Transient analysis","Logic gates","Silicon","Doping","Integrated circuit modeling","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/ICECS.2015.7440267
  • Filename
    7440267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3763798