Title :
Bulk and FDSOI Sub-micron CMOS transistors resilience to single-event transients
Author :
Walter Calienes Bartra;Andrei Vladimirescu;Ricardo Reis
Author_Institution :
Universidade Federal do Rio Grande do Sul, PGMicro - Instituto de Inform?tica, Porto Alegre, RS - Brazil
Abstract :
This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on the Drain region. The impacts were performed in different transistor locations at different impact angles whereas previous works considered the impact just at a 0 degree angle. This comparison is performed with the device in the off-state using 2D TCAD simulations. The results show a 7.7 times improved resilience of the FDSOI transistor compared to that of Bulk MOSFET.
Keywords :
"Transistors","Transient analysis","Logic gates","Silicon","Doping","Integrated circuit modeling","Substrates"
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
DOI :
10.1109/ICECS.2015.7440267
