DocumentCode
3763901
Title
A 1V low-power low-noise biopotential amplifier based on flipped voltage follower
Author
Tamer Farouk;Mohamed Elkhatib;Mohamed Dessouky
Author_Institution
Department of electronic engineering, Military technical college, Cairo, Egypt
fYear
2015
Firstpage
539
Lastpage
542
Abstract
This paper presents a low-voltage low-power low-noise amplifier suitable for neural recording applications. Based on the flipped voltage follower (FVF) topology, the amplifier is able to operate under a 1 V supply by alleviating the tradeoff between the noise and the voltage headroom. A gm-cell was built using FVF, its effective transconductance is not a function of the bias current, so the noise contribution of the output transistors can be decreased without increasing the bias current. This amplifier is designed and simulated in a 130 nm CMOS process. The amplifier consumes 2.2 μW from 1 V supply voltage. The input referred noise is 3.7 μVrms. The amplifier has a BW from 25 Hz to 9.9 kHz.
Keywords
"Transistors","Transconductance","Topology","Cutoff frequency","CMOS process","Circuit synthesis","Electrodes"
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
Type
conf
DOI
10.1109/ICECS.2015.7440373
Filename
7440373
Link To Document