High frequency low voltage 32nm node CMOS rectifier for energy harvesting in implantable devices

A full -wave CMOS rectifier is presented in this paper which is used for powerlessly power up low voltage biomedical implantable devices. Bootstrapped capacitors are used to decrease the effective threshold voltage of main switch transistor in the rectifier architecture. This architecture has low voltage drop and good overall efficiency even at very low input voltage and over a wide range of frequency. Therefore, rectifier is suitable to use in biomedical implantable devices with low voltage power supplies over RF link. Leakage current through bulk has been reduced due to lowering on resistance, which is reduced because of biasing the bulk of the transistor with Dynamic Bulk Switching (DBS) technique. DBS technique uses highest voltage available in the circuit for biasing the circuit. Performance of the rectifier is verified and compared using standard TSMC 0.18 CMOS model and PTM 32nm CMOS model respectively.