High Q on-chip 3-D capacitor for RF applications

In this paper, an on-chip 3-D capacitor with multi-layer technology is proposed for RF application in the frequency range of (10-100) GHz. The demand for miniaturization of on chip passive devices, for instance, filter applications in the higher frequency range (RF-VLSI technology), is growing and to meet those requirements the multi-layer technology supports it. The simulation and design of the proposed structure is carried out for retrieving the quality factor and capacitance of 3-D capacitor and planar capacitor thus portraying the comparisons inherent thereof. Thus, a 30% improvement in quality factor and 20% improvement in capacitance is observed for 3-D capacitor over planar capacitor. The miniature chip area with a size of 50×50μm², renders it for radio frequency applications.