Title :
A hybrid CMOS-CNFET, 1.4-V 6.8-ppm/?C bandgap reference circuit
Author :
Sandip B. Rahane;A.K. Kureshi;S.D. Pable
Author_Institution :
Matoshri College of Engineering and Research Center Nasik, S.P.P.U., Pune, India
Abstract :
This paper proposes a novel hybrid CMOS-CNFET bandgap reference circuit consisting of a CMOS bandgap core and a CNFET error amplifier. Both CMOS and CNFET circuits are based on 32nm technology node. Resulting hybrid topology utilizes resistive subdivision method and low threshold CNFET devices to lower the common mode input voltage of the error amplifier. The proposed bandgap reference achieves temperature coefficient of 6.8 ppm/°C at 1.4V power supply over the temperature range of -25°C to 125°C. The circuit produces a reference voltage of around 500mV with line sensitivity of ±2.25mV/V and dissipates 26μW power.
Keywords :
"Photonic band gap","CMOS integrated circuits","CNTFETs","Temperature dependence","Temperature sensors","CMOS technology"
Conference_Titel :
India Conference (INDICON), 2015 Annual IEEE
Electronic_ISBN :
2325-9418
DOI :
10.1109/INDICON.2015.7443249