Comparative analysis of GaAs MESFET with different dimensions

Field Effect Transistors are unipolar devices that offer superior high frequency and low noise performances. GaAs FET (Gallium Arsenide Field Effect Transistor) or MESFET (Metal Semiconductor Field Effect Transistor) is one of those FET that find its application in RF amplifier and oscillators. This paper discusses about the comparison between the current IDS (Drain to Source Current) of GaAs MESFET at different dimensions. MESFETs are characterised by their various physical dimensions like Gate width (W), Gate length (L) etc. Here Gate width is taken into consideration for comparison and output is taken as I-V characteristic in MS-EXCEL. It is found that when VGS (Gate to Source Voltage) is at zero volts, then current IDS will increase with increasing gate width W.