Design optimization of high-k dielectric based double-gate MOSFET and it´s performance

In Micro and Nano Technology, the downscaling of semiconductor devices requires the usage of alternative semiconductor material for SiO₂ as the gate dielectric. It requires new structure so that the higher current can be achieved. In view of this, in the present paper a structure of double-gate MOSFET with HfO₂ has been analysed. This paper includes an effect of threshold voltage on symmetric double-gate MOSFET for the application of wireless sensors networks and radio-frequency switches. By changing the structure from single-gate MOSFET to double-gate MOSFET, the threshold voltage can be change and so the leakage current and short channel effects can be decreased. Hence the switching speed of RF switch can be controlled.