Title :
Analysis of GaSb/InAs heterojunction Gate All Around Tunnel FET (HGAATFET)
Author :
Ajay;Mridula Gupta;Shashwat Bhattacharya;Sujata Pandey
Author_Institution :
Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi-110021, India
Abstract :
In this paper, a GaSb/InAs heterojunction Gate All Around Tunnel FET has been investigated. Broken gap alignment has been used in order to achieve more band-to-band tunneling and hence the ION of the device is increased. The electrical characteristics of the device such as surface potential, electric filed, energy band and drain current have been studied by using the device simulator. The characteristics of the device are simulated using Silvaco.
Keywords :
"Logic gates","MOSFET","Tunneling","Spontaneous emission"
Conference_Titel :
India Conference (INDICON), 2015 Annual IEEE
Electronic_ISBN :
2325-9418
DOI :
10.1109/INDICON.2015.7443451
