CSDG MOSFET: An Advanced novel architecture for CMOS technology

This paper explores the analog/RF performance of cylindrical surrounding double gate (CSDG) MOSFET in comparison to Cylindrical surrounding Gate (CSG) MOSFET for future nano CMOS devices. CSDG MOSFET has more gates on the silicon substrate to control the channel than any contemporary device. This device has one more cylindrical gate than the CSG MOSFET. That extra gate controls the inner core of the cylindrical silicon substrate. Short Channel Effects (SCEs) parameter like sub-threshold slope (SS), threshold voltage roll-off is shows improved than the CSG MOSFET. Analog /RF performance characteristics like transconductance generation factor gm/Ids, intrinsic gain (gm/gds), Ion/Ioff and effective drain current are calculated for CSG and CSDG MOSFET. Impact of gate dielectric permittivity is also investigated for both MOSFET.