Title :
High performance blue-violet AlGaInN laser diodes
Author :
Uchida, S. ; Tojyo, T. ; Kijima, S. ; Ikeda, M.
Author_Institution :
Dev. Center, Sony Shiroishi Semicond. Inc, Miyagi, Japan
Abstract :
The performance of AlGaInN laser diodes has been improved by introducing a novel structure to control the lateral mode. Kink level was increased to 70 mW maintaining a relatively large beam divergence in the lateral direction.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser modes; optical disc storage; semiconductor lasers; 70 mW; AlGaInN; AlGaInN laser diodes; high performance blue-violet AlGaInN laser diodes; kink level; large beam divergence; lateral direction; lateral mode; next generation read-write optical disk systems; Diode lasers; High speed optical techniques; Laser beams; Lifetime estimation; Optical beams; Optical control; Optical sensors; Power generation; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970795
