Title :
Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff
Author :
Chen, C.C. ; Hsu, M.C. ; Hsiao, J.R. ; Yen, J.L. ; Yang, Y.J. ; Lin, C.H. ; Wang, L.A. ; Liu, C.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We report that a blue LED was successfully fabricated oil a bounded InGaN/GaN/Si wafer, in which the InGaN/GaN epilayer was originally grown on a sapphire substrate then bonded and transferred to a Si substrate by laser liftoff technique.
Keywords :
III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; light emitting diodes; optical fabrication; optical storage; semiconductor growth; InGaN-GaN; InGaN-GaN-Si; InGaN/GaN epilayer; InGaN/GaN epilayer bonding; Si; Si Substrate; Si substrate; blue LED; blue light-emitting diode fabrication; laser liftoff; laser liftoff technique; optical storage; sapphire substrate; Gallium nitride; Gold; Lasers and electrooptics; Light emitting diodes; Optical device fabrication; Optical pulses; Pulsed laser deposition; Semiconductor lasers; Substrates; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970796
