Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells

Author

Peng, L.-H. ; Hsu, K.-T. ; Shih, C.-W. ; Chun, C.-C. ; Chyi, J.I.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

Large spectral red shifting (/spl sim/140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; light polarisation; photoluminescence; semiconductor quantum wells; AlGaN; AlGaN top barrier; AlGaN-InGaN; AlGaN-InGaN-GaN; AlGaN/InGaN interface; AlGaN/InGaN/GaN quantum wells; GaN cap layer; InGaN-GaN; InGaN/GaN quantum wells; additive internal field effect; epitaxial growth; high excitation luminescence spectra; large spectral red shifting; optical properties; reduced radiative recombination efficiency; spontaneous polarization effects; spontaneous polarization induced volume charge; Aluminum gallium nitride; Buffer layers; Electron optics; Gallium nitride; Optical buffering; Optical polarization; Optical pulses; Piezoelectric polarization; Radiative recombination; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.970797

Filename

970797