Fabrication of multiple-wavelength lasers in InGaAs/InGaAsP structures using direct laser writing

Author

Ong, T.K. ; Chan, Y.C. ; Ooi, B.S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

We have fabricated four distinguishable wavelength lasers ranging from 1480 nm to 1512 nm across a wafer using a direct laser writing technique. This process offers a potentially low-cost approach for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser materials processing; laser transitions; optical fabrication; optical transmitters; quantum well lasers; wavelength division multiplexing; 1480 to 1512 nm; InGaAs-InGaAsP; InGaAs/InGaAsP structure; direct laser writing; direct laser writing technique; distinguishable wavelength lasers; low-cost approach; multiple-wavelength laser fabrication; multiple-wavelength lasers; wavelength division multiplexing applications; Chemical lasers; Indium gallium arsenide; Optical device fabrication; Optical materials; Optical pulses; Plasma temperature; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.970807

Filename

970807