Title :
High power 1.55 /spl mu/m integrated superluminescent light source
Author :
Guotong Du ; Yang Liu ; Yuping Zeng ; Junfeng Song ; Yinjing Zhi
Author_Institution :
Dept. of Electron. Eng., Jilin Univ., Changchun, China
Abstract :
In order to suppress lasing and obtain high superluminescent power, we analyzed the lasing mechanism of integrated devices and three new schemes had been proposed in this paper. More than 300 mW pulsed power was obtained.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; light sources; optical communication equipment; semiconductor quantum wells; superluminescent diodes; wavelength division multiplexing; 1.55 micron; 300 mW; InGaAsP-InP; InGaAsP/InP SCH-MQWs; WDM; high power 1.55 /spl mu/m integrated superluminescent light source; high superluminescent power; integrated devices; lasing mechanism; lasing suppression; pulsed power; Etching; Light emitting diodes; Light sources; Optical reflection; Optical scattering; Optical waveguides; Semiconductor optical amplifiers; Space vector pulse width modulation; Superluminescent diodes; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970821
