Title :
Two-dimensional model of Dual Metal double gate tunnel FETs
Author :
Samantha Lubaba Noor;Samia Safa;Md. Ziaur Rahman Khan
Author_Institution :
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering & Technology, Dhaka, Bangladesh
Abstract :
Dual Metal double gate tunnel field-effect transistor (DMDG TFET) is a potential candidate for the next generation device fabrication. In this work a 2-D analytical model of the surface potential, electric field of DMDG TFET is developed by solving quasi-two-dimensional Poisson equation. These expressions can be numerically integrated to find the drain current. This model incorporates the effects of drain voltage, gate work function, gate length, gate dielectric thickness and silicon film thickness. The effectiveness of the proposed model is confirmed by a comparison with 2-D numerical simulations.
Keywords :
"Logic gates","Electric potential","Tunneling","Electric fields","Metals","Numerical models"
Conference_Titel :
Electrical and Computer Engineering (WIECON-ECE), 2015 IEEE International WIE Conference on
DOI :
10.1109/WIECON-ECE.2015.7444001
