Electrostatic analysis of graphene nanoribbon p-n junction diode

We present a simplified electrostatic analysis to obtain the current voltage (I-V) characteristics of one dimensional (1D) p-n junction diodes based on doped graphene nanoribbons (GNR). GNR is a semiconductor with an energy gap having unique transport properties of graphene. Explicit analytical model have been formulated for the spatial distributions of the electrical field potential and the voltage along the junction and the whole device. The I-V characteristics of the diode based on ideal Shockley-diode is observed and compared with other diodes. A strong dependence of the diode current with the width of the GNR is observed. The obtained results are important to explore ultra-fast diodes made of GNRs.